CHAPTER 1 The Crystal Structure of Solids 固體的晶體結構 1.0 PREVIEW 概覽 1.1 SEMICONDUCTOR MATERIALS 半導體材料 1.2 TYPES OF SOLIDS 固體類型 1.3 SPACE LATTICES 空間點陣 1.3.1 Primitive and Unit Cell 原胞與晶胞 1.3.2 Basic Crystal Structures 基本晶體結構 1.3.3 Crystal Planes and Miller Indices 晶面和米勒指數 1.3.4 The Diamond Structure 金剛石結構 1.4 ATOMIC BONDING 原子價鍵 1.5 IMPERFECTIONS AND IMPURITIES IN SOLIDS 固體中的缺陷和雜質 1.5.1 Imperfections in Solids 固體缺陷 1.5.2 Impurities in Solids 固體中的雜質 1.6 GROWTH OF SEMICONDUCTOR MATERIALS 半導體材料生長 1.6.1 Growth from a Melt 熔體生長 1.6.2 Epitaxial Growth 外延生長 1.7 DEVICE FABRICATION TECHNIQUES: OXIDATION 器件製備技術：氧化 1.8 SUMMARY 小結 PROBLEMS 習題 CHAPTER 2 Theory of Solids 固體理論 2.0 PREVIEW 概覽 2.1 PRINCIPLES OF QUANTUM MECHANICS 量子力學的基本原理 2.1.1 Energy Quanta 能量子 2.1.2 Wave-Particle Duality Principle 波粒二象性 2.2 ENERGY QUANTIZATION AND PROBABILITY CONCEPTS 能量量子化和概率 2.2.1 Physical Meaning of the Wave Function 波函數的物理意義 2.2.2 The One-Electron Atom 單電子原子 2.2.3 Periodic Table 元素周期表 2.3 ENERGY-BAND THEORY 能帶理論 2.3.1 Formation of Energy Bands 能帶的形成 2.3.2 The Energy Band and the Bond Model 能帶與價鍵模型 2.3.3 Charge Carriers—Electrons and Holes 載流子——電子和空穴 2.3.4 Effective Mass 有效質量 2.3.5 Metals, Insulators, and Semiconductors 金屬、 絕緣體和半導體 2.3.6 The k-Space Diagram k 空間能帶圖 2.4 DENSITY OF STATES FUNCTION 態密度函數 2.5 STATISTICAL MECHANICS 統計力學 2.5.1 Statistical Laws 統計規律 2.5.2 The Fermi-Dirac Distribution Function and the Fermi Energy 費米-狄拉克分佈和費米能級 2.5.3 Maxwell-Boltzmann Approximation 麥克斯韋-玻爾茲曼近似 2.6 SUMMARY 小結 PROBLEMS 習題 CHAPTER 3 The Semiconductor in Equilibrium 平衡半導體 3.0 PREVIEW 概覽 3.1 CHARGE CARRIERS IN SEMICONDUCTORS 半導體中的載流子 3.1.1 Equilibrium Distribution of Electrons and Holes 電子和空穴的平衡分佈 3.1.2 The n0 and p0 Equations 平衡電子和空穴濃度方程 3.1.3 3.2.1 Qualitative Description 定性描述 3.2.2 Ionization Energy 電離能 3.2.3 Group III-V Semiconductors III-V族半導體 3.3 CARRIER DISTRIBUTIONS IN THE EXTRINSIC SEMICONDUCTOR 非本征半導體的載流子分佈 3.3.1 Equilibrium Distribution of Electrons and Holes 電子和空穴的平衡分佈 3.3.2 The n0 p0 Product n0 p0 積 3.3.3 The Fermi-Dirac Integral 費米-狄拉克積分 3.3.4 Degenerate and Nondegenerate Semiconductors 簡並與非簡並半導體 3.4 STATISTICS OF DONORS AND ACCEPTORS 施主和受主的統計分佈 3.4.1 Probability Function 概率分佈函數 3.4.2 Complete Ionization and Freeze-Out 完全電離與凍析 3.5 CARRIER CONCENTRATIONS—EFFECTS OF DOPING 載流子濃度——摻雜的影響 3.5.1 Compensated Semiconductors 補償半導體 3.5.2 Equilibrium Electron and Hole Concentrations 平衡電子和空穴濃度 3.6 POSITION OF FERMI ENERGY LEVEL—EFFECTS OF DOPING AND TEMPERATURE 費米能級的位置——摻雜和溫度的影響 3.6.1 Mathematical Derivation 數學推導 3.6.2 Variation of EF with Doping Concentration and Temperature EF 隨摻雜濃度和溫度的變化 3.6.3 Relevance of the Fermi Energy 費米能級的關聯性 3.7 DEVICE FABRICATION TECHNOLOGY: DIFFUSION AND ION IMPLANTATION 器件製備技術：擴散和離子注入 3.7.1 Impurity Atom Diffusion 雜質原子擴散 3.7.2 Impurity Atom Ion Implantation 離子注入 3.8 SUMMARY 小結 PROBLEMS 習題 CHAPTER 4 Carrier Transport and Excess Carrier Phenomena 載流子輸運和過剩載流子現象 CHAPTER 5 The pn Junction and Metal-Semiconductor Contactpn結和金屬-半導體接觸 CHAPTER 6 Fundamentals of the Metal-Oxide-Semiconductor Field-Effect TransistorMOS場效應晶體管基礎 CHAPTER 7 Metal-Oxide-Semiconductor Field-Effect Transistor: Additional ConceptsMOS場效應晶體管的其他概念 CHAPTER 8 Nonequilibrium Excess Carriers in Semiconductors半導體中的非平衡過剩載流子 CHAPTER 9 The pn Junction and Schottky Diodes pn結二極體與肖特基二極體 CHAPTER 10 The Bipolar Transistor 雙極型晶體管 CHAPTER 11 Additional Semiconductor Devices and Device Concepts其他半導體器件及器件概念 CHAPTER 12 Optical Devices 光子器件
[