1 Physics of Ⅲ-Nitride Light-Emitting Diodes 1.1 History of Ⅲ-Nitride LEDs 1.2 Mechanisms of Ⅲ-Nitride LEDs 1.3 Radiative Recombination and Non-radiative Recombination 1.4 Internal Quantum Efficiency 1.5 Light Extraction Efficiency and External Quantum Efficiency References 2 Epitaxial Growth of III-Nitride LEDs 2.1 Ⅲ-Nitride Blue LEDs 2.2 Ⅲ-Nitride Green LEDs 2.2.1 InGaN/GaN Superlattice 2.2.2 Stacked GaN/A1N Last Quantum Barrier 2.3 Ⅲ-Nitride Ultraviolet LEDs 2.3.1 Sputtered A1N Nucleation Layer 2.3.2 Effect of PSS on UV LED 2.3.3 Patterned Sapphire with Silica Array 2.3.4 Isoelectronic Doping 2.3.5 InA1GaN/A1GaN Electron Blocking Layer 2.3.6 Graded AI-Content AIGaN Insertion Layer References 3 High-Efficiency Top-Emitting III-Nitride LEDs 3.1 Light Extraction Microstructure 3.1.1 PSS and Patterned ITO 3.1.2 Double Layer ITO 3.1.3 3D Patterned ITO and Wavy Sidewalls 3.1.4 Roughened Sidewalls 3.1.5 Air Voids Structure 3.2 Current Blocking Layer 3.2.1 SiO2 Current Blocking Layer 3.2.2 Patterned Current Blocking Layer 3.2.3 Reflective Current Blocking Layer 3.3 Back Reflector 3.4 Low Optical Loss Electrode Structure 3.5 Ni/Au Wire Grid Transparent Conductive Electrodes References 4 Flip-Chip Ⅲ-Nitride LEDs 4.1 Via-Hole-Based Two-Level Metallization Electrodes 4.2 Dielectric DBR 4.3 Comparison of Flip-Chip LEDs and Top-Emitting LEDs 4.4 Ag/TiW, Ni/Ag and ITO/DBR Ohmic Contacts 4.5 High-Power Flip-Chip LEDs 4.6 Double-Layer Electrode and Hybrid Reflector 4.7 Mini/Micro-LED 4.7.1 Prism-Structured Sidewall of Mini-LED 4.7.2 Light Extraction Analysis of Micro-LED References 5 High Voltage and Vertical LEDs 5.1 Direct Current High Voltage LED 5.2 Alternating Current High Voltage LED 5.3 Comparison of DC-HV LED and AC-HV LED
5.4 Vertical LEDs References 6 Device Reliability and Measurement 6.1 Influence of Dislocation Density on Device Reliability 6.2 Forward Leakage Current 6.3 Reverse Leakage Current 6.4 Pad Luster Consistency 6.5 Transient Measurement of LED Characteristic Parameters References
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