1 Introduction References 2 Basic Principles of LED 2.1 LED Luminescence Principle 2.1.1 History and Principle of Lighting Source 2.1.2 p-n Junction and the Principle of LED Luminescence 2.2 Radiation and Non-radiation Recombination 2.3 LED Optical and Electrical Characteristics 2.3.1 LED Quantum Efficiency 2.3.2 Radiation Spectrum 2.3.3 Basic Photometric Concepts in LED 2.3.4 Electrical Characteristics of LED 2.4 Principle of White LED 2.4.1 The Principle of Three Primary Colors and Addition of Light 2.4.2 The Realization Method of White LED References 3 Properties and Testing of Group Ⅲ-Nitride LED Materials 3.1 Crystal Structure and Band Structure of Group Ⅲ Nitride 3.1.1 Crystal Structure 3.1.2 Band Structure 3.2 Polarization Effect of Group Ⅲ Nitride Materials 3.2.1 Polarization Effect 3.2.2 Influence of Polarization Effect 3.3 Doping of Group Ⅲ-Nitride LED Materials 3.3.1 Doping of Nitride LED Materials 3.4 Test and Analysis of the Properties of Group Ⅲ Nitride Materials 3.4.1 Structural and Morphological Analysis 3.4.2 Surface and Film Composition Analysis 3.4.3 Other Photoelectric Test Methods References 4 Epitaxial of Ⅲ-Nitride LED Materials 4.1 Basic Models of Epitaxial 4.1.1 3-D Growth Mode (Volmer-Weber Mode) 4.1.2 2-D Growth Mode (Frank-Vander Merwe Mode) 4.1.3 2-D and 3-D Mixed Growth Mode(Stranski-Krastanob Mode) 4.2 Substrate for Epitaxial Growth of Ⅲ-Nitride LEDs(Sapphire/Si/SiC/LiA1Oz/GaN) 4.3 Group Ⅲ Nitride LED Epitaxial Technology 4.3.1 LPE Method 4.3.2 MBE Method 4.3.3 MOCVD Method 4.3.4 HVPE Method 4.4 Two-Step Growth Method for MOCVD Grown Nitride Materials 4.4.1 Surface Dynamics for Film Growth 4.4.2 Two-Step Growth Program for GaN/Sapphire by MOCVD 4.5 Influence of Growth Conditions on Epitaxial Layer Quality of Group Ⅲ Nitride Materials 4.5.1 Effect of Buffer Layer Growth Conditions on Material Quality 4.5.2 Effect of Rough Layer Growth Conditions 4.6 Epitaxial Technology of High Quality GaN on SiC Substrate 4.6.1 Basic Properties of SiC
4.6.2 Nucleation and Growth of GaN on SiC Substrate 4.6.3 Roots of GaN Stress on SiC Substrates References 5 InGaN/GaN Multiple Quantum Wells Materials as Well as Blue and Green LEDs 5.1 Introduction to InGaN Material System 5.2 Polarization Effects in InGaN/GaN Multiple Quantum Wells Materials 5.2.1 Polarity of GaN-Based Materials 5.2.2 Spontaneous Polarization and Piezoelectric Polarization 5.3 Quantum-Confined Stark Effect 5.3.1 Effect on Transition Energy Levels 5.3.2 Effect on Luminous Intensity 5.4 Carrier Localization in InGaN/GaN Multiple Quantum Wells 5.5 Green LED and Non-polar, Semi-polar LED 5.5.1 Polar Surface High in Composition Green LEDs 5.5.2 Semi-polar and Non-polar Materials 5.5.3 Research Progress on Semi-polar and Non-polar LEDs References 6 AIGaN-Based Multiple-Quantum-Well Materials and UV LEDs 6.1 Introduction of A1GaN Material System 6.2 Optical and Electrical Properties of A1GaN Materials 6.3 Epitaxial Growth and Doping Techniques for A1GaN Materials 6.4 Structure Design and Fabrication of UV LEDs References 7 Ⅲ-Nitride LED Quantum Efficiency Improvement Technology 7.1 Three Structures of LED 7.2 Internal Quantum Efficiency Improvement Technology 7.2.1 Homo-Epitaxial Growth of GaN 7.2.2 Multiple Quantum Wells 7.2.3 Active Region Doping 7.2.4 Electronic Barrier Layer 7.3 Light Extraction Efficiency Improvement Technology 7.3.1 Patterned Sapphire Substrate 7.3.2 Surface Roughening 7.3.3 Reflector 7.3.4 Flip-Chip Structure 7.3.5 Photonic Crystal 7.4 Current Injection Efficiency Improvement Technology 7.4.1 Current Spreading Layer 7.4.2 Current Distribution Theory 7.4.3 Current Blocking Technique 7.5 Droop Effect 7.5.1 Auger Recombination Effect 7.5.2 Electronic Overflow References 8 Ⅲ-Nitride LED Chip Fabrication Techniques 8.1 Group Ⅲ Nitride LED Fabrication Process 8.2 Photolithography
8.2.1 Mask and Photoresist 8.2.2 Lithography Process 8.3 Etching Process 8.3.1 Etching Parameters 8.3.2 Wet Etching and Dry Etching 8.3.3 Etching of GaN Materials 8.3.4 Etching of ITO and SiO2 Materials 8.4 Evaporation and Sputtering 8.4.1 Metal Evaporation 8.4.2 SiO2 Passivation Layer 8.5 Ohmic Contacts 8.5.1 n-type GaN Ohmic Contact 8.5.2 p-type GaN Ohmic Contact 8.5.3 Specific Contact Resistivity 8.5.4 Transparent Electrode Technology 8.6 Flip-Chip LEDs 8.7 Vertical Structure LEDs 8.7.1 Electroplating Technology 8.7.2 Bonding Technology 8.7.3 Laser Lift-Off References 9 Packaging of Group-Ⅲ Nitride LED 9.1 Group Ⅲ Nitride LED Packaging Materials 9.1.1 LED Chip 9.1.2 Lead Frame of LED 9.1.3 LED Die Bonding Glue 9.1.4 Bonding Wire 9.1.5 LED Packaging Adhesive 9.1.6 Thermal Interface Material 9.1.7 Substrate Material 9.2 Group Ⅲ Nitride LED Encapsulation Process 9.3 LED Packaging Technology 9.3.1 White LED Package Technology 9.3.2 UV Packaging Technology 9.3.3 High Power Density Packaging Technology 9.3.4 Wafer Level Packaging Technology 9.4 Package and System Cooling Technology 9.4.1 Packaging and System Cooling Technology 9.4.2 LED Thermal Testing Technology 9.5 Development Trend of LED Encapsulation Form References 10 Reliability Analysis of Group Ⅲ Nitride LEDs Devices 10.1 Failure Mode and Failure Analysis 10.1.1 Light Decay 10.1.2 Sudden Failure 10.1.3 Packaging 10.2 The LED Aging Test and an Aging Mechanism 10.2.1 Aging Experiment and Acceleration Factor 10.2.2 Temperature Acceleration Test 10.2.3 Accelerated Electrical Stress Test
10.2.4 Other Factors Affecting the Lifetime 10.3 LED System Reliability 10.3.1 LED System Reliability 10.3.2 The Cases of Reliability Analysis in the LED Lighting System References 11 Applications of LEDs 11.1 New Light Environment Technology 11.1.1 LED Lighting Technology Background 11.1.2 Basic Principles of LED Lighting 11.1.3 Lighting and Display and Construction of Fusion 11.1.4 Lighting and Outlook 11.2 Visible Light Communication Application System 11.3 LED Display 11.3.1 LED Display Overview 11.3.2 Outdoor LED Display 11.3.3 Small Pitch Display and Indoor Applications 11.3.4 Wide Color Gamut LED Back Light Technology 11.4 LED for Plant Breeding 11.4.1 Overview 11.4.2 Alternative Plant Lighting 11.4.3 Lighting Design Features 11.4.4 Systematic Design Trend 11.5 Medical Applications 11.5.1 Treatment of Neonatal Jaundice 11.5.2 Treatment of Hemorrhoids 11.5.3 Treatment of Wound Healing 11.5.4 Treatment of Oral Ulcer Inflammation 11.5.5 Treatment of Joint Pain 11.5.6 Application in Medical Beauty References 12 Novel Nitride LED Technology 12.1 GaN-Based Nanorod LED 12.1.1 Advantages of Nanorod LEDs 12.1.2 Preparation Method of Nanorod LED 12.1.3 Application of Nanorod LED 12.2 Quantum Dot LED 12.2.1 Preparation Method of Quantum Dots 12.2.2 Optical Properties of Quantum Dots 12.2.3 Advantages and Research Status of Quantum Dot Light-Emitting Diodes 12.3 Surface Plasmon Enhanced GaN-Based LED 12.3.1 Basic Properties of Surface Plasmons 12.3.2 Principles of SP Coupling Enhanced LED 12.3.3 Coupling Methods for SP Coupling Enhanced GaN-Based LED 12.3.4 Surface Plasmon Application in Improving LED's Modulation Bandwidth 12.4 GaN-Based Polarizing LEDs 12.4.1 Secondary Optical Design 12.4.2 The LEDs Plus Metal Grating 12.4.3 Nonpolar LEDs 12.4.4 The Edge-Emitting Polarized LEDs 12.4.5 Surface Plasmon Coupled Polarized LEDs
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